Fracture properties of GaAs-AlAs superlattices studied by atomic force microscopy and scanning electron microscopy
- Cavendish Lab., Cambridge (United Kingdom)
GaAs-AlAs superlattices with periodicities of up to 200 nm were cleaved to expose (110) faces. These surfaces were studied using high resolution scanning electron microscopy where the secondary electron images reveal contrast between the GaAs and AlAs layers and also indicate that the AlAs layers are topographically raised with respect to the GaAs. Atomic force microscopy of the same samples shows that the AlAs ridges can extend as far as 55 nm beyond the GaAs surface. Further secondary electron images of cross-sections of plastically deformed GaAs-AlAs superlattices reveal that the AlAs layers can undergo severe deformation whereas the GaAs layers fracture more readily. It is proposed that the AlAs protrusions on the (110) cleavage surface are due to the fracture behavior of the superlattice as well as oxidation effects.
- OSTI ID:
- 616197
- Journal Information:
- Acta Materialia, Vol. 46, Issue 2; Other Information: PBD: 5 Jan 1998
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization of GaAs/(GaAs)/sub /ital n//(AlAs)/sub /ital m// surface-emitting laser structures through reflectivity and high-resolution electron microscopy measurements
X-ray standing-wave study of (AlAs){sub m}(GaAs){sub n} short-period superlattices