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Operation and control of an ion-implantation/sputtering storage device for /sup 85/Kr

Conference ·
OSTI ID:6161051
The design and operation of a device for implanting /sup 85/Kr in a sputtered Cu-Y alloy for long-term storage tests are described. A total of approx.400 Ci of /sup 85/Kr, in a 4.2% mixture with nonradioactive isotopes, was implanted in three batches at a rate of 6.1 sccm. A triode discharge operating at a pressure of 0.4 Pa with a plasma current of 4.5 A was maintained with a potential of 67 V. The target and substrate potentials were 2400 and 290, respectively, with an ion current density of approx.100 A/m/sup 2/. The discharge and pumping action was started with nonradioactive Kr, then was switched to the radioactive gas until all in the reservoir was consumed, then again was switched to the nonradioactive gas to apply a closeout layer. The control feature used made it possible to empty the /sup 85/Kr reservoir without use of an auxiliary pumping system. 13 refs., 4 figs.
Research Organization:
Pacific Northwest Lab., Richland, WA (USA)
DOE Contract Number:
AC06-76RL01830
OSTI ID:
6161051
Report Number(s):
PNL-SA-13239; CONF-851174-39; ON: DE86007724
Country of Publication:
United States
Language:
English