Damage induced by CHF/sub 3/+C/sub 2/F/sub 6/ plasma etching on Si-implanted GaAs(100)
The damage induced by CHF/sub 3/+C/sub 2/F/sub 6/ plasma etching on GaAs(100) was studied. We exposed GaAs(100) surfaces to various etching conditions and monitored sheet resistance, carrier concentration, and Hall mobility. Significant losses of Hall mobility and carrier concentration, and an increase in sheet resistance were observed only when CHF/sub 3/ was introduced into the plasma. After annealing at 400 /sup 0/C for 55 min, sheet resistance was restored nearly to the value obtained before the plasma exposure. We believe that the damage was produced by hydrogen atoms or ions dissociated from CHF/sub 3/ in the plasma. In contrast to the general belief that plasma etching induces the least damage among dry etching techniques (such as reactive ion etching (RIE) and reactive ion beam etching (RIBE)), our plasma etching damage was comparable to previously reported RIE or RIBE damage.
- Research Organization:
- Honeywell Inc., Physical Sciences Center, 10701 Lyndale Avenue South, Bloomington, Minnesota 55420
- OSTI ID:
- 6160593
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 62:5
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
CARBON FLUORIDES
CARRIER DENSITY
ELECTRON MOBILITY
ETCHING
HALL EFFECT
HYDROCARBONS
ION COLLISIONS
MOLECULAR IONS
PLASMA
ARSENIC COMPOUNDS
ARSENIDES
CARBON COMPOUNDS
CHARGED PARTICLES
COLLISIONS
FLUORIDES
FLUORINE COMPOUNDS
GALLIUM COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
IONS
MOBILITY
ORGANIC COMPOUNDS
PARTICLE MOBILITY
PNICTIDES
RADIATION EFFECTS
SURFACE FINISHING
360605* - Materials- Radiation Effects