Semiconductor with protective surface coating and method of manufacture thereof. [Patent application]
Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Dept. of Energy
- OSTI ID:
- 6155548
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
GERMANIUM DIODES
SURFACE COATING
SEMICONDUCTOR DEVICES
FABRICATION
RADIATION DETECTORS
DEPOSITION
MEASURING INSTRUMENTS
SEMICONDUCTOR DIODES
420800* - Engineering- Electronic Circuits & Devices- (-1989)
440100 - Radiation Instrumentation