Spontaneous recombination current in InGaAs/GaAs quantum well lasers

Journal Article · Mon Oct 08 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103370· OSTI ID:6148631

Blood, P; Fletcher, E D; Woodbridge, K; Vening, M ^[1]

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1. Philips Research Laboratories, Redhill, Surrey, (United Kingdom)

We have studied the intrinsic factors which determine the threshold current and its temperature dependence in 160-A-wide In{sub 0.2}Ga{sub 0.8}As single well quantum lasers with GaAs barriers, grown by molecular beam epitaxy on GaAs substrates. By measuring the relative temperature dependence of the spontaneous emission intensity at threshold we show that radiative transitions between higher order ({ital n}=2,3) electron and heavy hole subbands make a significant contribution to the threshold current and its temperature sensitivity, even in devices where the laser transitions are between {ital n}=1 subbands. These higher transitions will also influence the dependence of threshold current and its temperature sensitivity on well width.

• OSTI ID: 6148631
• Journal Information: Applied Physics Letters; (USA), Vol. 57:15; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
EMISSION SPECTRA
GALLIUM ARSENIDES
INDIUM ARSENIDES
RECOMBINATION
TEMPERATURE DEPENDENCE
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SPECTRA
426002* - Engineering- Lasers & Masers- (1990-)