Weak-localization effects in V/sub 1-//sub x/Si/sub x/ amorphous alloys with high Si content
We present high-field magnetoresistance measurements on a series of V/sub 1-//sub x/Si/sub x/ amorphous alloys with high Si content (0.50 less than or equal to x less than or equal to 0.86). For alloys with x less than or equal to 0.75 the magnetoresistance-versus-field curves are characteristic of weak localization effects in the presence of strong spin-orbit coupling despite rather low values of the disorder parameter. But a tentative fit of experimental curves at high field from model equations is made difficult on the one hand by the electron-electron interaction term becoming important at high field and on the other hand by the possible inadequacy of model formulations of weak localization effects in the high H/T limit. However, reasonable values for the inelastic and spin-orbit relaxation times are tentatively proposed. Due to phase separation occurring for x greater than or equal to 0.82, the metal-nonmetal transition could not be observed.
- Research Organization:
- Service des Champs Intenses, Laboratoire de Physique des Solides, Institut National des Sciences Appliquees, Avenue de Rangueil, 31077 Toulouse Cedex, France
- OSTI ID:
- 6148620
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 36:10; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360104* -- Metals & Alloys-- Physical Properties
ALLOYS
AMORPHOUS STATE
COUPLING
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON-ELECTRON INTERACTIONS
INTERACTIONS
INTERMEDIATE COUPLING
L-S COUPLING
LEPTON-LEPTON INTERACTIONS
MAGNETIC FIELDS
MAGNETORESISTANCE
METALLIC GLASSES
PARTICLE INTERACTIONS
PHYSICAL PROPERTIES
RELAXATION TIME
SILICON ALLOYS
VANADIUM ALLOYS