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Weak-localization effects in V/sub 1-//sub x/Si/sub x/ amorphous alloys with high Si content

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)

We present high-field magnetoresistance measurements on a series of V/sub 1-//sub x/Si/sub x/ amorphous alloys with high Si content (0.50 less than or equal to x less than or equal to 0.86). For alloys with x less than or equal to 0.75 the magnetoresistance-versus-field curves are characteristic of weak localization effects in the presence of strong spin-orbit coupling despite rather low values of the disorder parameter. But a tentative fit of experimental curves at high field from model equations is made difficult on the one hand by the electron-electron interaction term becoming important at high field and on the other hand by the possible inadequacy of model formulations of weak localization effects in the high H/T limit. However, reasonable values for the inelastic and spin-orbit relaxation times are tentatively proposed. Due to phase separation occurring for x greater than or equal to 0.82, the metal-nonmetal transition could not be observed.

Research Organization:
Service des Champs Intenses, Laboratoire de Physique des Solides, Institut National des Sciences Appliquees, Avenue de Rangueil, 31077 Toulouse Cedex, France
OSTI ID:
6148620
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 36:10; ISSN PRBMD
Country of Publication:
United States
Language:
English