Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface

Patent · Tue Mar 10 04:00:00 EST 1981

OSTI ID:6135946

Fraas, L M

A new high efficiency, multijunction photovoltaic solar cell for use with a concentration lengs is described. This cell comprises an elemental single crystal substrate without an internal light sensitive junction, upon which are two or more successive homogenous layers of semiconductor materials, each layer containing within it a light sensitive p/n junction of a similar polarity, each layer having essentially the same lattice constant as the single crystal substrate, each layer having a shorting junction contact with the layer immediately above and below it, each successive layer absorbing light energy at a shorter wavelength, and each layer being of sufficient thickness and appropriate composition to develop essentially the same current as the other layers. At the junction, between the successive layers of the multilayer cell, a thin pseudo transparent low bandgap semiconductor layer is provided at the shorting junction interface. The outer surfaces of the top layer and the substrate are provided with electrical contacts for distribution of the electric current. The top contact comprises a layer of a transparent conductive material with electrical connections and the whole structure is completed with an antireflection coating over the top.

• Assignee: Chevron Research Co
• Patent Number(s): US 4255211
• OSTI ID: 6135946
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
COATINGS
DESIGN
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM PHOSPHIDE SOLAR CELLS
GERMANIUM
INDIUM PHOSPHIDE SOLAR CELLS
JUNCTIONS
METALS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT