Depth distributions of low energy deuterium implanted into silicon as determined by SIMS
Secondary ion mass spectrometry (SIMS) has been used to determine depth profiles of deuterium implanted into single crystal silicon targets at energies between 0.1 and 5 keV. The atomic mixing inherent in the sputtering process, which directly affects depth resolution, has been reduced by using a bombarding particle of low energy and high Z impacting the sample at a large angle relative to the surface normal (3 keV, Cs/sup +/, impacting at 60/sup 0/). Using this procedure, depth resolution of 20 A at a depth of 800 A has been obtained in depth profiling of Ta/sub 2/O/sub 5/ on Ta. Mean projected range and straggling of the implant profiles are in good agreement with calculations when irradiations are performed at 11/sup 0/ from the normal to the (100) plane to prevent channeling. The saturation density of trapped deuterium has also been determined to be 1.4 x 10/sup 22/ D/cm/sup 3/.
- Research Organization:
- Princeton Univ., NJ (USA). Plasma Physics Lab.
- DOE Contract Number:
- EY-76-C-02-3073
- OSTI ID:
- 6131647
- Report Number(s):
- PPPL-1575
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
700104* -- Fusion Energy-- Plasma Research-- Plasma Kinetics-Experimental-- (-1987)
ATOMIC IONS
CESIUM IONS
CHALCOGENIDES
CHARGED PARTICLES
DEUTERIUM IONS
ELEMENTS
HYDROGEN IONS
ION IMPLANTATION
IONS
MASS SPECTROSCOPY
METALS
OXIDES
OXYGEN COMPOUNDS
REFRACTORY METALS
SEMIMETALS
SILICON
SPECTROSCOPY
SPUTTERING
TANTALUM
TANTALUM COMPOUNDS
TANTALUM OXIDES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TRAPPING