Conduction mechanisms in radiation-damaged MINP Si solar cells. Technical report No. 7, 1 August 1986-31 July 1987

Technical Report · Mon Dec 01 04:00:00 EST 1986

OSTI ID:6124660

Banerjee, S; Anderson, W A

Current-voltage characteristics of e(-) irradiated silicon MINP solar cells were studied as a function of temperature to understand the radiation-induced enhancement in the dark current. The devices show efficiences about 16% and excellent junction properties before irradiation. The conduction mechanisms in as fabricated devices have been recognized as diffusion and recombination in the space charge region through deep centers. However, current conduction was found to be dominated by the presence of shallow defect centers in the space charge layer after the devices were irradiated at 1 MeV e(-) to a final fluence of 10/sup 16/ e(-)/cm/sup 2/. Some of the defect levels have been associated with structural damage and caused by the irradiation.

• Research Organization: State Univ. of New York, Buffalo (USA). Dept. of Electrical Engineering
• OSTI ID: 6124660
• Report Number(s): AD-A-183510/7/XAB
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
DAMAGE
DIRECT ENERGY CONVERTERS
EQUIPMENT
MI SOLAR CELLS
OPTIMIZATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPACE CHARGE