Creep of monolithic and SiC whisker-reinforced MoSi2

Conference · Tue Oct 01 04:00:00 EDT 1991 · Ceramic Engineering and Science Proceedings; (United States)

OSTI ID:6109906

Sadananda, K; Jones, H; Feng, J; Petrovic, J J; Vasudevan, A K

Creep deformation of MoSi2 with and without reinforced SiC whiskers was studed under uniaxial compression in the temperature range 1100-1400 C. The creep rates were significantly reduced by the presence of SiC whisker reinforcement. The reduction is attributed to increased resistance to plastic flow and inhibition of grain boundary sliding. From the activation energy and n values, it is concluded that the overall creep deformation at high T in both the composite and the monolithic MoSi2 is controlled by dislocation glimb process, while in the monolithic MoSi2 at low T, it is controlled possibly by combined grain boundary sliding and glimb process. 12 refs.

• OSTI ID: 6109906
• Report Number(s): CONF-910162--
• Conference Information: Journal Name: Ceramic Engineering and Science Proceedings; (United States) Journal Volume: 12
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360203* -- Ceramics
Cermets
& Refractories-- Mechanical Properties
360603 -- Materials-- Properties
CARBIDES
CARBON COMPOUNDS
COMPOSITE MATERIALS
CORROSION RESISTANCE
CREEP
CRYSTAL STRUCTURE
CRYSTALS
DEFORMATION
ENGINES
GAS TURBINE ENGINES
GRAIN BOUNDARIES
HEAT ENGINES
INTERNAL COMBUSTION ENGINES
MATERIALS
MECHANICAL PROPERTIES
MICROSTRUCTURE
MOLYBDENUM COMPOUNDS
MOLYBDENUM SILICIDES
MONOCRYSTALS
REFRACTORY METAL COMPOUNDS
SILICIDES
SILICON CARBIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
WHISKERS