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Formation of complex defects involving molecular oxygen by electron-hole reactions in x-irradiated KClO/sub 4/ and KBrO/sub 4/, studied by ESR and IR spectroscopy

Journal Article · · J. Chem. Phys.; (United States)
OSTI ID:6105844
Complex defects of composition (XO/sup -//sub 2/, O/sub 2/), X = Cl, Br, produced by UV or x-irradiation of solid KClO/sub 4/ and KBrO/sub 4/ at 26 K are characterized by ESR and IR spectroscopy. (XO/sup -//sub 2/, O/sub 2/) is shown to arise during x-irradiation in a reaction between self-trapped electrons in the form of XO/sup 2 -//sub 4/ defects, and self-trapped holes in the form of (XO/sub 4/)/sup -//sub 2/ defects. The previously described hole defect (XO/sub 2/, O/sub 2/) is shown to arise from oxidation of (XO/sup -//sub 2/, O/sub 2/) by reaction with (XO/sub 4/)/sup -//sub 2/. Thus all the abundant defects observed in x-irradiated KClO/sub 4/ and KBrO/sub 4/ stem from self-trapping of electrons and holes and from simple reactions of the self-trapped electrons and holes. The observed equivalence of optical excitation of the anions with electron-hole recombination may be a general property of polyatomic solids.
Research Organization:
Department of Chemistry, Aarhus University, DK-8000 Aarhus C, Denmark
OSTI ID:
6105844
Journal Information:
J. Chem. Phys.; (United States), Journal Name: J. Chem. Phys.; (United States) Vol. 82:5; ISSN JCPSA
Country of Publication:
United States
Language:
English