Influence of doping on the etching of Si(111)

Journal Article · Thu Oct 15 04:00:00 EDT 1987 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.36.6613· OSTI ID:6096318

Winters, H F; Haarer, D

Exposure of solid surfaces to reactive gases (or radicals) often leads to chemical reactions which produce volatile products. These are frequently called etching reactions. The example discussed in this paper involves the reaction of XeF/sub 2/ with Si(111) to produce SiF/sub 4/(gas). It will be shown that the etch rate depends strongly upon the concentration and type of dopant. It also depends upon the thickness of the fluorosilyl (SiF/sub x/) layer on the surface. The trends previously observed in plasma-assisted etching environments are shown to also occur in the XeF/sub 2/-Si reaction. A simple model will be developed which indicates a strong correlation between the number of negative ions on the surface and the etch rate. The model is based upon some of the ideas originally proposed by Mott and Cabrera to describe oxide growth and on the Poisson-Boltzmann equation which describes the space charge at a semiconductor interface.

• Research Organization: IBM Research, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
• OSTI ID: 6096318
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 36:12; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
CHEMICAL REACTIONS
CORRELATIONS
CRYSTAL FACES
DOPED MATERIALS
ELEMENTS
ETCHING
FLUORIDES
FLUORINE COMPOUNDS
GASEOUS WASTES
HALIDES
HALOGEN COMPOUNDS
KINETICS
MASS SPECTRA
MATERIALS
QUANTITY RATIO
RARE GAS COMPOUNDS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON FLUORIDES
SPECTRA
SURFACE FINISHING
WASTES
XENON COMPOUNDS
XENON FLUORIDES