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Thallium-doped lead selenide

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6096204
Measurements have been made on the properties of thallium-doped lead selenide as a function of mixture composition for crystals grown from the vapor by the vapor-liquid-crystal mechanism. Tl is an acceptor dope, and p-type conductivity is obtained from a mixture of composition Pb/sub x/Tl/sub y/Se/sub z/ with z = 0.413 and y greater than or equal to 0.018 or with y = 0.01 and x less than or equal to 0.52. The (p/sub Pb/-p/sub Tl/)/sub 973K/ partial-pressure diagram has been calculated for the Pb-Tl-Se system. The dependence on thallium vapor pressure has been determined for the composition of thallium-doped lead selenide made by diffusion annealing at p/sub Pb/ = const. With p/sub Pb/ = 1.3332 Pa and p/sub Tl/ greater than or equal to 1.87 /times/ 10/sup /minus/3/ Pa, one obtains p-type conductivity.
Research Organization:
M.V. Lomonosov Univ., Moscow (USSR)
OSTI ID:
6096204
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 23:11; ISSN INOMA
Country of Publication:
United States
Language:
English