Ultraviolet damage resistance of dielectric reflectors under multiple-shot irradiation

Journal Article · Thu Oct 01 04:00:00 EDT 1981 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1981.1070666· OSTI ID:6095715

Foltyn, S R; Newnam, B E

Multiple-shot damage thresholds of dielectric reflectors have been measured at 248 and 308 nm. Standard irradiation conditions were a 10 ns pulsewidth, a 0.6 mm spot diameter, and a 35 Hz pulse repetition frequency. The reflectors, from various sources, were composed of oxide and fluoride films. Although damage was generally initiated at visible film defects, there was no correlation between damage susceptibility and the appearance of these defects. At levels near threshold, damage was most often observed as an increase in white-light scatter of a site with no growth upon continued irradiation; at higher levels the damage site grew with successive shots.

• Research Organization: Los Alamos National Lab., NM
• OSTI ID: 6095715
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-17:10; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360306* -- Composite Materials-- Radiation Effects-- (-1987)
CHALCOGENIDES
DAMAGE
DIELECTRIC MATERIALS
ELECTROMAGNETIC RADIATION
FILMS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
IRRADIATION
LASER RADIATION
LIGHT SCATTERING
MATERIALS
MEASURING INSTRUMENTS
NEUTRON DETECTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
PULSED IRRADIATION
RADIATION DETECTORS
RADIATION EFFECTS
RADIATIONS
SCATTERING
THRESHOLD DETECTORS
ULTRAVIOLET RADIATION