Radiation-induced charge dynamics in dielectrics

Journal Article · Wed Dec 01 00:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336421· OSTI ID:6093174

Labonte, K

A general physical model is presented for the analysis of charge dynamics in dielectrics exposed to ionizing radiation. Discrete trap levels, recombination between trapped and free carriers, trapping and detrapping events, and the mobility of positive and negative charge carriers are included in the theory. This model is applied to electron beam irradiated Teflon FEP foils and results for various boundary conditions are compared with experimental data from a split Faraday cup arrangement.

• Research Organization: Technical University, Darmstadt Merckstr. 25 D-6100, Darmstadt
• OSTI ID: 6093174
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. 29:6
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DIELECTRIC MATERIALS
DYNAMICS
ELECTRIC CHARGES
RADIATION EFFECTS
CARRIER MOBILITY
CHARGE CARRIERS
ELECTRON BEAMS
FARADAY CUPS
IONIZING RADIATIONS
MATHEMATICAL MODELS
RECOMBINATION
TEFLON
TRAPPING
BEAM MONITORS
BEAMS
FLUORINATED ALIPHATIC HYDROCARBONS
HALOGENATED ALIPHATIC HYDROCARBONS
LEPTON BEAMS
MATERIALS
MEASURING INSTRUMENTS
MECHANICS
MOBILITY
MONITORS
ORGANIC COMPOUNDS
ORGANIC FLUORINE COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
ORGANIC POLYMERS
PARTICLE BEAMS
PETROCHEMICALS
PETROLEUM PRODUCTS
PLASTICS
POLYETHYLENES
POLYMERS
POLYOLEFINS
POLYTETRAFLUOROETHYLENE
RADIATIONS
SYNTHETIC MATERIALS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems