EPROM erasure in transient and total dose gamma environments

Journal Article · Tue Nov 30 23:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336426· OSTI ID:6093154

Linderman, P B; Kuma, J O

Four versions of 32K bit EPROMs from three manufacturers were exposed to transient gamma and total dose radiation environments. At a maximum tested transient level of 3.9X10/sup 9/ rad (Si)/sec, the devices were found to be resistant to erasure. Failures from the total dose exposures occurred at different levels for the four device types. The most susceptible part type failed between 3200 and 4500 rad(Si). The most resistant type failed between 9500 and 11000 rad(Si). These variations in total dose failure threshold are attributed to the floating gate oxide thickness differences between the four versions of this EPROM.

• Research Organization: Northrop Corp., 2301 W. 120th St., Hawthorne, CA 90250
• OSTI ID: 6093154
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 29:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
DOSES
ELECTROMAGNETIC RADIATION
FAILURES
GAMMA RADIATION
IONIZING RADIATIONS
MEMORY DEVICES
OXIDES
OXYGEN COMPOUNDS
RADIATION DOSES
RADIATION EFFECTS
RADIATIONS
THRESHOLD DOSE
TRANSIENTS