Electrical conductivity and thermo-emf of melts of the system Tl-Te-Se

Journal Article · Fri Jul 01 00:00:00 EDT 1988 · High Temp. (Engl. Transl.); (United States)

OSTI ID:6091936

Kazandzhan, B I; Matveev, V M; Umarov, A M

A study was made of the temperature dependences of the electrical conductivity and thermo-emf of melts of ternary system Tl-Te-Se from the melting point to 1000 K. Concentration dependences of these parameters were also established. The data obtained were used with data for binary systems to construct isothermal surfaces of electrical conductivity and thermo-emf for the system Tl-Te-Se at T = 750 K. The results show that it is possible to control the electronic properties of melts of complex semiconductor systems having lamination regions.

• Research Organization: Moscow Energy Institute (USSR)
• OSTI ID: 6091936
• Journal Information: High Temp. (Engl. Transl.); (United States), Vol. 26:1; Other Information: Translated from Teplofiz. Vys. Temp.; 26: No. 1, 69-74(Jan-Feb 1988)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
THALLIUM SELENIDES
ELECTRICAL PROPERTIES
THALLIUM TELLURIDES
CALCULATION METHODS
ELECTRIC CONDUCTIVITY
ELECTROMOTIVE FORCE
ISOTHERMS
MELTING
PHASE DIAGRAMS
QUANTITY RATIO
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
THERMOELECTRIC PROPERTIES
CHALCOGENIDES
DIAGRAMS
MATERIALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
THALLIUM COMPOUNDS
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies