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SNAP structures with Nb-AlO/sub x/-Nb junctions for MM wave receivers

Conference · · IEEE Trans. Magn.; (United States)
OSTI ID:6090797
High quality small area Nb-AlO/sub x/-Nb junctions have been fabricated by Selective Niobium Anodization Process (SNAP). The influence of the preparation conditions on the junctions properties were investigated. The numerical calculations based on IVCs measured by data acquisition system were used to simulate the mixer performance. It has been shown that the knee structure on the IVC of refractory material junctions affects significantly the signal properties of the mixer. The experimental investigation of the signal and noise properties for different types of the integrated SIS mixing elements have been performed in the frequency range of 37 - 53 GHz; the mixer conversion loss (SSB) was as low as 4 dB at 45 GHz. The mixing elements consist of the odd number of SIS junctions connected in series for RF and parallel for dc biasing have been tested. The dc bias wiring and IF filters of these structures were designed to provide tuning out of the junctions capacitance and thin film electrodes inductance. The advantages of these mixing elements to traditional series array have been demonstrated.
Research Organization:
Institute of Radio Engineering and Electronics, USSR Academy of Sciences, Marx Avenue 18, Moscow GSP-3 103907 (SU)
OSTI ID:
6090797
Report Number(s):
CONF-880812-
Conference Information:
Journal Name: IEEE Trans. Magn.; (United States) Journal Volume: 25:2
Country of Publication:
United States
Language:
English

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