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Microfabrication of WO/sub 3/-based microelectrochemical devices

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.343474· OSTI ID:6088850

A new photolithographic process for the patterning of WO/sub 3/ is reported. A layer of sputtered polycrystalline WO/sub 3/ can be patterned by a combination of photolithographic and dry etching processes to selectively cover a fraction of eight Pt microelectrodes each /similar to/50 ..mu..m long, 2 ..mu..m wide, and 0.3 ..mu..m thick, and spaced 1.2 ..mu..m apart. The modified microelectrode arrays were characterized by electrochemistry, surface profilometry, and scanning electron microscopy. A pair of microelectrodes connected by WO/sub 3/ comprises a microelectrochemical transistor with /ital p/H-dependent electrical characteristics based on the /ital p/H and potential dependent conductivity of WO/sub 3/ associated with the reversible electrochemical reaction WO/sub 3/+/ital n/H/sup +/+/ital ne//sup /minus///r reversible/H/sub /ital n//WO/sub 3/.

Research Organization:
Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139(US)
OSTI ID:
6088850
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 66:2; ISSN JAPIA
Country of Publication:
United States
Language:
English