Microfabrication of WO/sub 3/-based microelectrochemical devices
A new photolithographic process for the patterning of WO/sub 3/ is reported. A layer of sputtered polycrystalline WO/sub 3/ can be patterned by a combination of photolithographic and dry etching processes to selectively cover a fraction of eight Pt microelectrodes each /similar to/50 ..mu..m long, 2 ..mu..m wide, and 0.3 ..mu..m thick, and spaced 1.2 ..mu..m apart. The modified microelectrode arrays were characterized by electrochemistry, surface profilometry, and scanning electron microscopy. A pair of microelectrodes connected by WO/sub 3/ comprises a microelectrochemical transistor with /ital p/H-dependent electrical characteristics based on the /ital p/H and potential dependent conductivity of WO/sub 3/ associated with the reversible electrochemical reaction WO/sub 3/+/ital n/H/sup +/+/ital ne//sup /minus///r reversible/H/sub /ital n//WO/sub 3/.
- Research Organization:
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139(US)
- OSTI ID:
- 6088850
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 66:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
400400* -- Electrochemistry
AUGER ELECTRON SPECTROSCOPY
CHALCOGENIDES
CHEMICAL REACTIONS
CHEMISTRY
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROCHEMISTRY
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ETCHING
FABRICATION
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
POLYCRYSTALS
REFRACTORY METAL COMPOUNDS
SCANNING ELECTRON MICROSCOPY
SPECTROSCOPY
SPUTTERING
SURFACE FINISHING
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN OXIDES