Comparisons of GaAs, tungsten, and photoresist etch rates and GaAs surfaces using RIE with CF/sub 4/, CF/sub 4/ + N/sub 2/, and SF/sub 6/ + N/sub 2/ mixtures

Journal Article · Fri Nov 01 00:00:00 EST 1985 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2113660· OSTI ID:6084868

Susa, N

Etch rates for GaAs, tungsten, and photoresist were compared using CF/sub 4/, CF/sub 4/ + N/sub 2/, and SF/sub 6/ + N/sub 2/ gases. Etch rate ratio between the W and photoresist can be increased by N/sub 2/ gas addition, with a negligibly low GaAs etch rate. GaAs surfaces exposed to CF/sub 4/ + N/sub 2/ or SF/sub 6/ + N/sub 2/ plasmas were characterized by means of photoluminescence (PL), Schottky contacts, secondary ion mass spectroscopy (SIMS), and Auger electron spectroscopy (AES). The PL intensity measurements and Schottky characteristics revealed that the damage to the GaAs surface was somewhat smaller than that caused by pure CF/sub 4/ gas. The AES and SIMS measurements showed that the change in Ga/As composition after reactive ion etching was negligibly small. Results of heat-treatment are also described. Curious annealing characteristics were observed in the CF/sub 4/ + N/sub 2/, suggesting the existence of GaN.

• Research Organization: Nippon Telegraph and Telephone Corporation, Musashino Electrical Communication Laboratory, Musashino-shi, Tokyo
• OSTI ID: 6084868
• Journal Information: J. Electrochem. Soc.; (United States), Vol. 132:11
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CHEMICAL REACTION KINETICS
COMPARATIVE EVALUATIONS
ETCHING
TUNGSTEN
ANNEALING
AUGER ELECTRON SPECTROSCOPY
CARBON FLUORIDES
ELECTRIC CONTACTS
GALLIUM NITRIDES
HEAT TREATMENTS
ION SPECTROSCOPY
MASS SPECTROSCOPY
MEASURING METHODS
NITROGEN
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
SCHOTTKY EFFECT
SULFUR FLUORIDES
SURFACE PROPERTIES
SURFACE TREATMENTS
ARSENIC COMPOUNDS
ARSENIDES
CARBON COMPOUNDS
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
ELEMENTS
EQUIPMENT
FLUORIDES
FLUORINE COMPOUNDS
GALLIUM COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
KINETICS
LUMINESCENCE
METALS
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PHYSICAL PROPERTIES
PNICTIDES
REACTION KINETICS
SPECTROSCOPY
SULFUR COMPOUNDS
SURFACE FINISHING
TRANSITION ELEMENTS
360601* - Other Materials- Preparation & Manufacture
360603 - Materials- Properties