Aluminum doping studies on high field ZnO varistors
We have investigated the effect of Al doping on the physical and electronic properties of high field ZnO varistors. For this study, varistors containing 98.94 m/o ZnO, 0.25 m/o CoO, 0.25 m/o MnO, 0.56 m/o Bi/sub 2/O/sub 3/ and 0 to 200 ppM Al were prepared from powders obtained from solution precipitation techniques. Because of the amphoteric nature of aluminum oxides, precise control of pH and metal concentrations was necessary to assure complete incorporation of dopants. We observed inhibition of grain growth during sintering of varistor pellets at aluminum concentrations of 50 ppM and above. The measured electrical properties show increased switching fields and increased nonlinearity coefficients for Al doping levels of 50 to 200 ppM.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6082425
- Report Number(s):
- SAND-86-0713; ON: DE87014270
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products. Original copy available until stock is exhausted
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
SEMICONDUCTOR RESISTORS
ELECTRICAL PROPERTIES
ZINC OXIDES
ALUMINIUM ADDITIONS
DOPED MATERIALS
GRAIN SIZE
POROSITY
SINTERING
ALLOYS
ALUMINIUM ALLOYS
CHALCOGENIDES
CRYSTAL STRUCTURE
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
MATERIALS
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RESISTORS
SEMICONDUCTOR DEVICES
SIZE
ZINC COMPOUNDS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360204 - Ceramics
Cermets
& Refractories- Physical Properties