Effects of rf power and reactant gas pressure on plasma deposited amorphous hydrogenated silicon
The properties of amorphous hydrogenated silicon films produced at room temperature by rf glow discharge decomposition of silane have been studied while systematically varying the rf power and the pressure of the reactant gas. The structure and composition of the films were monitored by measuring the optical gap, IR vibrational spectrum, and the hydrogen evolution rate. Evidence is seen for an improvement of film quality at high rf power levels. Such improvement is discussed in terms of energetic ion bombardment of the growth surface. The significance of ion bombardment is emphasized by comparing films grown simultaneously on biased and unbiased electrodes. Increasing pressure moderates the ion bombardment energies and diminishes the film quality.
- Research Organization:
- Solid State Science Division, Argonne National Laboratory, Argonne, Illinois 60439
- OSTI ID:
- 6074315
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 52:11
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON
HYDROGENATION
AMORPHOUS STATE
CHEMICAL REACTIONS
COMPARATIVE EVALUATIONS
DATA
DECOMPOSITION
DEPOSITION
ENERGY GAP
GASES
GLOW DISCHARGES
INFRARED SPECTRA
MATHEMATICAL MODELS
PLASMA
PRESSURE DEPENDENCE
QUANTITY RATIO
RF SYSTEMS
SILANES
VIBRATIONAL STATES
ELECTRIC DISCHARGES
ELEMENTS
ENERGY LEVELS
EXCITED STATES
FLUIDS
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
SEMIMETALS
SILICON COMPOUNDS
SPECTRA
360603* - Materials- Properties