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Title: An electron undulating ring for VLSI lithography

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6061726

The development of the ETL storage ring ''TERAS'' as an undulating ring has been continued to achieve a wide area exposure of synchrotron radiation (SR) in VLSI lithography. Stable vertical and horizontal undulating motions of stored beams are demonstrated around a horizontal design orbit of TERAS, using two small steering magnets of which one is used for vertical undulating and another for horizontal one. Each steering magnet is inserted into one of the periodic configulation of guide field elements. As one of useful applications of undulaing electron beams, a vertically wide exposure of SR has been demonstrated in the SR lithography. The maximum vertical deviation from the design orbit nCcurs near the steering magnet. The maximum vertical tilt angle of the undulating beam near the nodes is about + or - 2mrad for a steering magnetic field of 50 gauss. Another proposal is for hith-intensity, uniform and wide exposure of SR from a wiggler installed in TERAS, using vertical and horizontal undulating motions of stored beams. A 1.4 m long permanent magnet wiggler has been installed for this purpose in this April.

Research Organization:
Electrotechnical Laboratory, Sakura, Niihari, Ibaraki
OSTI ID:
6061726
Report Number(s):
CONF-850504-; TRN: 86-011486
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Vol. NS-32:5; Conference: Particle accelerator conference, Vancouver, Canada, 13 May 1985
Country of Publication:
United States
Language:
English