Low temperature electron irradiation and annealing of pure cadmium. [Electrons below 2/sup 0/K]

Technical Report · Mon Jan 01 04:00:00 EST 1979

DOI:https://doi.org/10.2172/6060629· OSTI ID:6060629

Menendez, M. A.

Cadmium after electron irradiation below 2/sup 0/K, was studied and the damage production rate in Dc was found to be (4.13 +- .16) x 10/sup -26/ ..cap omega..cm/(e/sup -//cm/sup 2/) for irradiation with 2.5 MeV electrons at 1.5/sup 0/K. New annealing peaks were observed at 1.825/sup 0/K and at about 2/sup 0/K with activation energies of (2.6 +- .1) x 10/sup -3/ eV and (2.77 +- .34) x 10/sup -3/ eV, respectively. The peak at about 2/sup 0/K exhibits dose-dependence, but it is better described by first order kinetics; this peak is believed to correspond to the long-range migration of the self-interstitial, preferentially to impurities where they form clusters. It has been found that subthreshold irradiation results in the annealing of damage already present. This radiation annealing effect may be a contributing factor to the seesaw effect. Another physical process may contribute to the seesaw effect, namely, the trapping of interstitials at impurities and their subsequent detrapping during annealing.

• Research Organization: Wright State Univ., Dayton, OH (USA); Illinois Univ., Urbana (USA)
• DOE Contract Number: EY-76-C-02-1198
• OSTI ID: 6060629
• Report Number(s): COO-1198-1274
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
ACTIVATION ENERGY
ANNEALING
CADMIUM
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY
HEAT TREATMENTS
IMPURITIES
INTERSTITIALS
IONS
METALS
MIGRATION
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
SAMPLE PREPARATION
TRAPPING