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Title: Heat-exchanger method, ingot casting. Fixed-abrasive method, multi-wire slicing. Phase II. Silicon-sheet-growth development for the Large-Area Sheet Task of the Low-Cost Solar-Array Project. Final report, November 21, 1977 to November 20, 1978

Technical Report ·
OSTI ID:6055624

Ingot casting by the Heat Exchanger Method (HEM) and ingot slicing by the Fixed Abrasive Slicing Technique (FAST) was developed to demonstrate technical feasibility. It has been shown that approximately square crystals can be grown by HEM. The quality of single-crystal regions of the HEM silicon has been demonstrated by solar cells with 15% conversion efficiency. High purity crucibles have been fabricated according to semiconductor standards to help prevent ingot cracking. Theoretical and experimental analyses have established conditions for vacuum processing of silicon. The use of molybdenum retainers and low cost graphite heat conducting pipes is reported. The FAST has been used to slice large workpieces with a high-speed slicer. Electroplated and impregnated blades have been developed. (LEW)

Research Organization:
Crystal Systems, Inc., Salem, MA (USA)
DOE Contract Number:
NAS-7-100-954373
OSTI ID:
6055624
Report Number(s):
DOE/JPL/954373-79/9; ON: DE82004147
Country of Publication:
United States
Language:
English