Ultra-high quality Nb/AlO sub x Nb tunnel junctions with epitaxial base layers
- Dept. of Materials Science and Metallurgy, Univ. of Cambridge, Pembroke Street, Cambridge CB2 3QZ (GB)
- Naval Research Lab., Washington, DC (United States)
In this paper using an ultra-high vacuum DC sputtering system the authors have fabricated NB/AlO{sub x}/Nb tunnel junction devices with epitaxial Nb base layers. We have been investigating the improvements in device quality which can be achieved by heating the substrates during the growth of the tunnel barrier. By measuring the subgap characteristic under magnetic field at temperatures down to 0.4K, we show that for V {lt} {Delta}Nb the currents in devices with critical current densities in the range 10{sub 5}--10{sup 6} Am{sup {minus}2} follow closely the BCS prediction and show no extrinstic leakage current. The divergence of the curve for higher current densities and at higher voltages is discussed.
- OSTI ID:
- 6045519
- Report Number(s):
- CONF-900944-; CODEN: IEMGA
- Journal Information:
- IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States), Vol. 27:2; Conference: 1990 applied superconductivity conference, Snowmass, CO (United States), 24-28 Sep 1990; ISSN 0018-9464
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BCS THEORY
NIOBIUM
SPUTTERING
SUPERCONDUCTING JUNCTIONS
FABRICATION
CURRENT DENSITY
DIFFUSION BARRIERS
LAYERS
LEAKAGE CURRENT
MAGNETIC FIELDS
QUALITY CONTROL
SUPERCONDUCTIVITY
TUNNEL EFFECT
ULTRAHIGH VACUUM
CONTROL
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
JUNCTIONS
METALS
PHYSICAL PROPERTIES
TRANSITION ELEMENTS
665412* - Superconducting Devices- (1992-)
665411 - Basic Superconductivity Studies- (1992-)
665300 - Interactions Between Beams & Condensed Matter- (1992-)