Electrical properties of Ga and ZnS doped ZnO prepared by mechanical alloying
- Ames Laboratory, Iowa State University, Ames, Iowa 50011-3020 (United States)
- ZT Services, Inc., 2203 Johns Circle, Auburn, Alabama 36830-7113 (United States)
A series of n-type ZnO alloys doped with Ga and ZnS were prepared by mechanical alloying. Densities of 95{percent} to 98{percent} of theoretical density were achieved by hot pressing the milled powders at 1000 and 1200{degree}C, respectively. The electrical resistivity and Seebeck coefficient of alloys containing 0.25{endash}3.0 at.{percent} Ga were characterized between 22 and 1000{degree}C. The magnitude of the resistivity and Seebeck coefficient at 22{degree}C ranged from 0.2 m{Omega}cm and {minus}25 {mu}V/{degree}C for the most heavily doped specimen to 1.1 m{Omega} cm and {minus}70 {mu}V/{degree}C for the lightly doped material. The alloys exhibit a positive temperature coefficient of resistivity and Seebeck coefficient with a nearly constant slope over the temperature range studied. Thermal diffusivity measurements on a specimen containing 1.0 at.{percent} Ga were performed over the same temperature range. The thermal conductivity appears to follow a T{sup {minus}1} dependence, decreasing from 180 mW/cm{degree}C at 22{degree}C to 82 mW/cm{degree}C at 1000{degree}C. An estimate of the maximum dimensionless thermoelectric figure of merit, ZT, in this system at 1000{degree}C gives a value of 0.26, a factor of three to four less than current state-of-the-art materials such as Si{endash}Ge. A significant reduction in thermal conductivity would be required to make these alloys competitive with existing thermoelectric power generation materials. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 604411
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 83; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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