Cell and defect behavior in lithium-counterdoped solar cells
Technical Report
·
OSTI ID:6032242
Some n(+)/p cells in which lithium is introduced as a counterdopant, by ion-implantation, into the cell's boron-doped p-region were studied. To determine if the cells radiation resistance could be significantly improved by lithium counterdoping. Defect behavior was related to cell performance using deep level transient spectroscopy. Results indicate a significantly increased radiation resistance for the lithium counterdoped cells when compared to the boron doped 1 ohm-cm control cell. The increased radiation resistance of the lithium counterdoped cells is due to the complexing of lithium with divacancies and boron. It is speculated that complexing with oxygen and single vacancies also contributes to the increased radiation resistance. Counterdoping silicon with lithium results in a different set of defects.
- Research Organization:
- National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center
- OSTI ID:
- 6032242
- Report Number(s):
- N-84-29322
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALKALI METALS
BORON
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
ION IMPLANTATION
IRRADIATION
JUNCTIONS
LITHIUM
METALS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALKALI METALS
BORON
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
ION IMPLANTATION
IRRADIATION
JUNCTIONS
LITHIUM
METALS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT