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Point-contact silicon solar cells

Technical Report ·
OSTI ID:6030625
A new type of silicon photovoltaic cell is described and numerically analyzed. The cell is called the point-contact cell and shows potential for achieving energy conversion efficiencies in the neighborhood of 26 to 28 percent at the design operating of 500X geometric concentration and 60 C cell temperature. In the point-contact cell contact metal touches the silicon in an array of points. The cell is made of lightly doped silicon with dopant diffusions only at the contact points. The region between contacts, on both top and bottom, is covered by high quality SiO/sub 2/ for surface passivation. The surfaces are slightly textured and the backside is made reflective to promote light trapping. Opposite type contacts can be on the front and back of the cell, whereupon it is called a backsurface cell. Using a variational approach a three dimensional approximate solution of the semiconductor device equations has been developed to analyze the potential of point-contact cells. This solution, when coded in Pascal, has proved fast enough for mental results on similar cell structures designed for thermophotovoltaic applications indicate very good agreement.
Research Organization:
Stanford Univ., CA (USA). Stanford Electronics Labs.
OSTI ID:
6030625
Report Number(s):
EPRI-AP-2859; ON: DE83902348
Country of Publication:
United States
Language:
English

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