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Electron and omnidirectional proton irradiations of AlGaAs-GaAs solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:6025651
Space use of GaAs solar cells is subordinated to a better knowledge of the degradation due to ionizing particles. Omnidirectional fluxes of 10MeV protons are simulated in our experiments. I-V curves and DLTS measurements are carried out on the same device. Results obtained on AlGaAs-GaAs cells are compared with the degradation due to 1 and 2-MeV electrons. Challenge with silicon solar cells is discussed. 10-MeV proton irradiations give lower degradation of photovoltaic parameters in AlGaAs-GaAs solar cells than in Si solar cells. Electron damages are of the same order of magnitude. Coefficients of equivalence for Isc are deduced from these results.
Research Organization:
Departement d'Etudes et de Recherches en Technologie Spatiale, Onera-Cert, B.P. 4025, 31055 Toulouse Cedex (France)
OSTI ID:
6025651
Report Number(s):
CONF-840561-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English