Effect of cavity length on picosecond pulse generation with highly rf modulated AlGaAs double heterostructure lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
We report the generation of picosecond pulses with oxide-isolated-stripe, double heterostructure GaAlAs laser diodes of varying lengths. A pulse width of 15 ps at a repetition frequency of 1 GHz is achieved with a 60-..mu..m-long device. The experiments indicate a linear relation between pulse width and laser length.
- Research Organization:
- Cambridge University Engineering Dept., Cambridge, England
- OSTI ID:
- 6019604
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:11; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Picosecond pulse generation with a cw GaAlAs laser diode
Synchronous mode locking of semiconductor laser diodes by a picosecond optoelectronic switch
High attenuating external cavity for picosecond-tunable pulse generation from gain/Q-switched laser diodes
Journal Article
·
Tue Aug 01 00:00:00 EDT 1978
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6847266
Synchronous mode locking of semiconductor laser diodes by a picosecond optoelectronic switch
Journal Article
·
Wed Aug 01 00:00:00 EDT 1984
· J. Appl. Phys.; (United States)
·
OSTI ID:6681864
High attenuating external cavity for picosecond-tunable pulse generation from gain/Q-switched laser diodes
Journal Article
·
Tue Jun 01 00:00:00 EDT 1993
· IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:5826410
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DATA
DIMENSIONS
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
FUNCTION GENERATORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER CAVITIES
LASERS
LENGTH
MATHEMATICAL MODELS
METALS
MODULATION
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
PULSE GENERATORS
RF SYSTEMS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DATA
DIMENSIONS
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
FUNCTION GENERATORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER CAVITIES
LASERS
LENGTH
MATHEMATICAL MODELS
METALS
MODULATION
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
PULSE GENERATORS
RF SYSTEMS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS