Dynamic characteristics of a GaAs injection amplifier
Journal Article
·
· Sov. J. Quant. Electron. (Engl. Transl.); (United States)
Theoretical and experimental investigations were made of the dynamic characteristics of a semiconductor injection amplifier operating under linear and saturation (by the input signal) regimes. It was found that in the nonlinear regime the response time of a semiconductor amplifier subjected to pulse-code modulation is limited to a value of the order of the spontaneous recombination time. Some potential applications of such nonlinear amplifiers in fast-response communication systems are pointed out.
- Research Organization:
- All-Union Scientific-Research Institute of Optophysical Measurements, Moscow
- OSTI ID:
- 6019541
- Journal Information:
- Sov. J. Quant. Electron. (Engl. Transl.); (United States), Journal Name: Sov. J. Quant. Electron. (Engl. Transl.); (United States) Vol. 11:5; ISSN SJQEA
- Country of Publication:
- United States
- Language:
- English
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