Heavy ion Rutherford Backscattering Spectrometry (HIRBS) for the near surface characterization of electronic materials
The use of heavy ion projectiles for Rutherford Backscattering Spectrometry (RBS) provides several potential advantages over conventional RBS with /sup 4/He beams. Among these advantages are the improved mass resolution for heavy elements (>50 amu) and the increased accessible depth of analysis. A series of experiments using 20-MeV /sup 16/O beam backscattered from a variety of targets was performed in order to examine the potential advantages of heavy ion RBS in the near-surface characterization of semiconductors with masses >50 amu. Important questions such as mass resolution, depth resolution, isotopic effects, absolute sensitivity and minimum detectable limit of impurities were investigated. Ion implantations and multiple layered structures on GaAs substrates as well as metal germanide systems were studied. The development of the method in conjunction with the channeling technique is also discussed.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6013172
- Report Number(s):
- LBL-18897; ON: DE85007632
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400103 -- Radiometric & Radiochemical Procedures-- (-1987)
ARSENIC COMPOUNDS
ARSENIDES
BACKSCATTERING
BEAMS
CHEMICAL ANALYSIS
ELASTIC SCATTERING
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION BEAMS
ION IMPLANTATION
ION SCATTERING ANALYSIS
MATERIALS
MEV RANGE
MEV RANGE 10-100
NONDESTRUCTIVE ANALYSIS
OXYGEN 16 BEAMS
PNICTIDES
RUTHERFORD SCATTERING
SCATTERING
SEMICONDUCTOR MATERIALS
SURFACES