n-type GaAs photoanodes in acetonitrile: Design of a 10. 0% efficient photoelectrode
n-type GaAs semiconductor/liquid junctions have been studied in acetonitrile (ACN) solvent with the ferrocene/ferricenium redox couple. Previously reported inefficiencies in this system are demonstrated to be due to bulk electron-hole recombination and not to recombination at the junction. Increases in minority-carrier collection length lead to increases in short circuit current of the n-GaAs/ferrocene/ferricenium cell in ACN, with photocurrent densities in excess of 21 mA/cm/sup 2/ at 88 mW/cm/sup 2/ of ELH-type tungsten-halogen irradiation. Properly prepared n-GaAs samples yield photoelectrode efficiencies of 10.0% +- 0.5% for conversion of natural sunlight (65 mW/cm/sup 2/) to electricity, with open circuit voltages V/sub oc/ of 0.70--0.72 V, short circuit currents of 16--17 mA/cm/sup 2/, and fill factors of 0.52--0.56, when measured relative to the potential of a reversible reference electrode in the same solvent/redox couple/electrolyte solution.
- Research Organization:
- Stanford University, Stanford, California 94305
- OSTI ID:
- 6012712
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 43:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
PHOTOANODES
DESIGN
EFFICIENCY
PHOTOELECTROCHEMICAL CELLS
ACETONITRILE
CHARGE CARRIERS
CURRENT DENSITY
ELECTRIC CURRENTS
ELECTROLYTES
ELECTRON-HOLE COUPLING
FERROCENE
GALLIUM ARSENIDES
JUNCTIONS
LENGTH
LIQUIDS
N-TYPE CONDUCTORS
RADIATION EFFECTS
RECOMBINATION
REDOX REACTIONS
ANODES
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
COMPLEXES
CURRENTS
DIENES
DIMENSIONS
ELECTROCHEMICAL CELLS
ELECTRODES
EQUIPMENT
FLUIDS
GALLIUM COMPOUNDS
HYDROCARBONS
IRON COMPLEXES
MATERIALS
NITRILES
ORGANIC COMPOUNDS
ORGANIC NITROGEN COMPOUNDS
PNICTIDES
POLYENES
SEMICONDUCTOR MATERIALS
SOLAR EQUIPMENT
TRANSITION ELEMENT COMPLEXES
140505* - Solar Energy Conversion- Photochemical
Photobiological
& Thermochemical Conversion- (1980-)