Electronic structure induced by lateral composition modulation in GaInAs alloys

Journal Article · Wed Apr 01 04:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.121303· OSTI ID:600966

Mattila, T; Bellaiche, L; Wang, L; Zunger, A ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

It has been recently shown that growth of [001]-oriented short period (AC){sub n}/(BC){sub n} {ital vertical} superlattices (n{approximately}1{minus}2) spontaneously creates a {ital lateral} composition modulation in the substrate plane ([110] direction), where wire-like AC-rich and BC-rich domains alternate with a period of {approximately}100{minus}200 {Angstrom}. This creates a new type of lattice structure with orthogonal [001] and [110] strain fields {ital and} compositional waves. Using a three-dimensional plane-wave pseudopotential approach, we study here the electronic properties of this type of structure in a GaInAs alloy, predicting valence band splittings into distinctly polarized components, a {le}100 meV band-gap reduction and strong, type I electron and hole confinement in the In-rich lateral channels. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 600966
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 72; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
COHERENCE LENGTH
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM ARSENIDES
INDIUM ARSENIDES
MODULATION
POLARIZATION
STRAINS
SUPERLATTICES