Scanning electron microscopy techniques

Conference · Wed Jan 01 00:00:00 EST 1992

OSTI ID:6009658

Cole, Jr, E I

The scanning electron microscope (SEM) has become as standard a tool for IC failure analysis as the optical microscope, with improvements in existing SEM techniques and new techniques being reported regularly. This tutorial has been designed to benefit both novice and experienced failure analysts by reviewing several standard as well as new SEM techniques used for failure analysis. Advanced electron-beam test systems will be covered briefly; however all techniques discussed may be performed on any standard SEM. Topics to be covered are (1) standard techniques: secondary electron imaging for surface topology, voltage contrast, capacitive coupling voltage contrast, backscattered electron imaging, electron beam induced current imaging, and x-ray microanalysis and (2) new SEM techniques: novel voltage contrast applications, resistive contrast imaging, biased resistive contrast imaging, and charge-induced voltage alteration. Each technique will be described in terms of the information yielded, the physics behind technique use, any special equipment and/or instrumentation required to implement the technique, the expertise required to implement the technique, possible damage to the IC as a result of using the technique, and examples of using the technique for failure analysis. 11 refs.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6009658
• Report Number(s): SAND-92-0143C; CONF-920327-3; ON: DE92006821
• Resource Relation: Conference: IEEE international reliability physics symposium, San Diego, CA (United States), 30 Mar - 2 Apr 1992
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INTEGRATED CIRCUITS
SCANNING ELECTRON MICROSCOPY
BACKSCATTERING
ELECTRON BEAMS
FAILURE MODE ANALYSIS
IMAGE PROCESSING
BEAMS
ELECTRON MICROSCOPY
ELECTRONIC CIRCUITS
LEPTON BEAMS
MICROELECTRONIC CIRCUITS
MICROSCOPY
PARTICLE BEAMS
PROCESSING
SCATTERING
SYSTEM FAILURE ANALYSIS
SYSTEMS ANALYSIS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)