Polarization characteristics of distributed feedback semiconductor lasers

Journal Article · Fri Feb 01 04:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95686· OSTI ID:6007415

Agrawal, G P; Dutta, N K

The threshold behavior of an index-guided distributed feedback semiconductor laser is analyzed theoretically with particular attention paid to the effect of internal stress on the polarization of stimulated emission. Using parameters appropriate for a 1.55-..mu..m InGaAsP laser, a distributed feedback laser is found to have a lower threshold margin between the transverse electric (TE) and transverse magnetic (TM) modes than a similar Fabry--Perot laser. This threshold margin is strongly dependent on the internal stress normal to the active layer and depending on its magnitude either TE or TM mode may reach threshold first. The present analysis is in qualitative agreement with the experimental observations and is useful for device optimization.

• Research Organization: AT and T Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6007415
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
DESIGN
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
GAIN
LASERS
OPTIMIZATION
POLARIZATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
STRESSES
THRESHOLD ENERGY