Dynamic behavior of mode-locked Nd : YAG laser annealing in ion-implanted Si, GaAs, and GaP

Journal Article · Mon Oct 15 00:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91231· OSTI ID:6006943

Murakami, K; Gamo, K; Namba, S; Kawabe, M; Aoyagi, Y

By measuring the time-dependent optical reflectivity, we have investigated the dynamic behavior of annealing with the 30-psec pulse train of a mode-locked Nd : YAG laser. It was first observed that at narrow ranges of high laser energy density, the reflectivity of implanted Si and GaAs increases slowly to the level consistent with liquid ones, except GaP, and remains at that level for a period less than 200 nsec. As to Si, the mode-locked laser is confirmed to have a weak effect on temperature rise and, therefore, to produce a thin molten layer compared to Q-switched Nd : YAG lasers.

• Research Organization: Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
• OSTI ID: 6006943
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GARNETS
HEAT TREATMENTS
INFORMATION
ION IMPLANTATION
LASERS
LAYERS
MELTING
METALS
MINERALS
MODE LOCKING
NEODYMIUM LASERS
OPTICAL PROPERTIES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
PULSES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICATES
SILICON
SILICON COMPOUNDS
SOLID STATE LASERS
TIME DEPENDENCE
TRANSITION ELEMENTS
YTTRIUM