Dielectric properties of radio frequency magnetron sputter deposited zirconium titanate-based thin films
- Motorola Inc., Plantation, FL (United States)
- Motorola Inc., Albuquerque, NM (United States). Ceramic Products Div.
The authors have studied the dielectric properties of thin film zirconia-titania-based mixed oxide compositions. Films of different Zr/Ti ratios were developed by radio frequency magnetron sputtering, and the effect of dopant addition to he composition were also investigated. The authors present a comparison of the electrical properties of zirconium titanate thin film capacitors in metal-insulator-semiconductor and metal-insulator-metal structures, and discuss the effect of process parameters on film properties. Stoichiometric (1:1 Zr:Ti), 320 {angstrom} zirconium titanate films on silicon exhibited an effective dielectric constant of 17 at 1 MHz. This is equivalent to an SiO{sub 2} thickness of 73 {angstrom}. For 2,500 {angstrom} thin zirconium titanate films on silicon, the dielectric constant was determined to be 37 at 1 MHz. On platinized silicon, the dielectric constant of 450 {angstrom} zirconium titanate films was 33. This corresponds to an equivalent SiO{sub 2} thickness of 53 {angstrom}. Direct current resistivities improved by nearly two orders of magnitude by modifying the film composition with an addition of tin oxide. Tin modification also resulted in a significant improvement in the film dc breakdown characteristics, and they have achieved dielectric breakdown field greater than 7 MV/cm. Zirconium titanate-based thin films display high resistivity and high dielectric constant, and are highly promising for ultra-large scale integration applications. These films provide large capacitance in small area, and hence, higher charge storage capacity.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 599677
- Journal Information:
- Journal of the Electrochemical Society, Vol. 145, Issue 1; Other Information: PBD: Jan 1998
- Country of Publication:
- United States
- Language:
- English
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