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Fabrication of Ag/Y{sub 2}O{sub 3}-stabilized ZrO{sub 2} composite films by metallorganic chemical vapor deposition

Journal Article · · Journal of the Electrochemical Society
DOI:https://doi.org/10.1149/1.1838197· OSTI ID:599624
; ; ;  [1];  [2]
  1. Univ. of New Mexico, Albuquerque, NM (United States)
  2. Sandia National Labs., Albuquerque, NM (United States). Advanced Materials Lab.
Composite films of Ag and Y{sub 2}O{sub 3}-stabilized ZrO{sub 2} have been prepared by simultaneous metallorganic chemical vapor deposition (MOCVD) of the metal and ceramic. Aerosol-assisted precursor delivery of a toluene solution of the precursors Zr(tfac){sub 4}, Y(hfac){sub 3}, and (hfac)Ag(C{sub 4}H{sub 8}OS){sub 2} was used to deposit films with Ag volume fractions ranging from 0.007 to 0.60 (hfac = hexafluoroacetylacetonate, tfac = trifluoroacetylacetonate). Film morphology and room-temperature resistivity varied with Ag content. Resistivities for Ag volume fractions above 0.30 were consistent with typical granular composite films; however, at Ag volume fractions below 0.10, much lower resistivities were found than are typically reported. The percolation behavior of the films is analyzed and possible explanations for the resistivity results are discussed.
Research Organization:
Sandia National Laboratory
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
599624
Journal Information:
Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 1 Vol. 145; ISSN 0013-4651; ISSN JESOAN
Country of Publication:
United States
Language:
English