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Electronic and atomic structure of metastable phases of boron nitride using core-level photoabsorption

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.110556· OSTI ID:5993527
; ;  [1]; ;  [2]
  1. Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)
  2. Physics Department, GM Research Laboratory, Warren, Michigan 48090 (United States)

Soft x-ray core-level photoabsorption has been measured from three forms of boron nitride, namely the hexagonal ([ital h]BN), cubic ([ital c]BN), and incoherent ([ital i]BN) phases. The B 1[ital s] and N 1[ital s] photoabsorption spectra of the [ital h]BN sample show evidence of both [sigma]*- and [pi]*-empty states, indicative of [ital sp][sup 2] bonding, while the [ital c]BN absorption spectra exhibits only [ital sp][sup 3] bonding in absorption features characteristic of the zincblende structure. The incoherent phase of BN in the form of a thin film on a Si substrate possesses [sigma]* and [pi]* states similar to [ital h]BN. The B 1[ital s] [pi]* absorption features of the [ital i]BN film show an angular dependence which suggests that the microstructure consists of hexagonal-phase layer planes oriented normal to the BN/Si interface.

DOE Contract Number:
W-7405-ENG-48
OSTI ID:
5993527
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:15; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English