Occupation fluctuation noise: A fundamental source of linewidth broadening in semiconductor lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
In this letter we consider the effect of fast thermal fluctuations of electronic state occupancy on the field spectrum of semiconductor lasers and derive for the first time an expression for the resulting power independent linewidth contribution. The magnitude and temperature dependence of this linewidth component agree reasonably well with measurements of a power independent linewidth made by Welford and Mooradian.
- Research Organization:
- California Institute of Technology 128-95, Pasadena, California 91125
- OSTI ID:
- 5990657
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 43:2
- Country of Publication:
- United States
- Language:
- English
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