Optical phase modulation in an injection locked AIGaAs semiconductor laser

Journal Article · Fri Oct 01 00:00:00 EDT 1982 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1982.1071395· OSTI ID:5990491

Koboyashi, S; Kimura, T

Optical phase modulation obtained by injecting coherent CW light into a directly freqency-modulated semiconductor laser is reported. Phase modulation at up to a 1 GHz modulation frequency has width. Phase deviation can be represented by the ratio of the original FM deviation to the locking half bandwidth. The phase deviation normalized by the frequency deviation is inversely proportional to the cutoff modulation frequency. A static phase shift of ..pi.. took place with a 0.48 mA drive current change in the injection locked laser. Reduction in FM noise by means of CW light injection and FM noise accumulation in cascaded injection locked laser amplifiers are discussed, together with the optimum design for an injection locked repeater system.

• Research Organization: Musashino Electrical Communication Lab, Nippon Telegraph + Telephone Public Corp., Musashinoshi, Tokyo, Japan
• OSTI ID: 5990491
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-18:10
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
MODULATION
OPTICAL MODES
PHASE SHIFT
ARSENIC
BEAM INJECTION
FREQUENCY RANGE
GALLIUM
IODINE
MODE LOCKING
RADIO NOISE
ELECTROMAGNETIC RADIATION
ELEMENTS
HALOGENS
LASERS
METALS
NOISE
NONMETALS
OSCILLATION MODES
RADIATIONS
RADIOWAVE RADIATION
SEMICONDUCTOR DEVICES
SEMIMETALS
420300* - Engineering- Lasers- (-1989)