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U.S. Department of Energy
Office of Scientific and Technical Information

Numerical analysis of silicon solar cells

Thesis/Dissertation ·
OSTI ID:5989755
A set of equations which accurately describes the physics of modern high-efficiency silicon solar cells is formulated and solved numerically. The transport equations of Marshak and van Vliet are recast into a simple. Boltzmann-like form in which the effects associated with the nonuniform band structure and degenerate carrier concentrations are described by two parameters, the effective gap shrinkage and the effective asymmetry factor. The experimental determination of both of these parameters is also discussed. Adler's contention, that some important features of semiconductor device operation can be modeled accurately by using an electically measured effective bandgap shrinkage with an arbitrarily chosen effective asymmetry factor, is also considered. A semiconductor device is described mathematically by Poisson's equation and two current continuity equations. Using the transport equations, these equations were solved numerically in one dimension. The accuracy of the model was tested by comparing the results of computer calculations to exact, analytical results (for certain simple cases) and to experimental results. The model was shown to accurately describe high-efficiency silicon solar cells under a wide range of operating biases and for solar concentrations that varied from 1 to 250. By using the computer model, we were able to explain a physical mechanism which operates to degrade the performance of BSF solar cells operated under high solar concentration. The model was also used to design cells in which the effects of this degradation were minimized. A two-dimensional numerical solar cell model was also developed. An example of the use of this program in analyzing IBC solar cells is presented.
OSTI ID:
5989755
Country of Publication:
United States
Language:
English