Structural properties of H-implanted InP crystals

Journal Article · Thu Jul 01 00:00:00 EDT 1993 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2220758· OSTI ID:5985159

Bocchi, C; Franzosi, P; Lazzarini, L; Salviati, G ^[1]; Gastaldi, L; Palumbo, R ^[2]

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1. C.N.R.-MASPEC Inst., Parma (Italy)
2. CSELT, Torino (Italy)

H has been implanted in InP crystals at the energy E [equals] 100 keV and at different doses ranging from [sigma] [equals] 1 x 10[sup 13] to [sigma] [equals] 5 x 10[sup 16] cm[sup [minus]2]. The depth dependence of the elastic lattice strain has been investigated by high resolution X-ray diffractometry. The implantation produces a lattice dilation. The strain increases with increasing depth, reaches the maximum at about 0.75 [mu]m, and then decreases rapidly; moreover the maximum strain is proportional to the dose. No extended crystal defects have been detected by transmission electron microscopy up to [sigma] <1 x 10[sup 16] cm[sup [minus]2] a buried amorphous layer 28 nm in thickness has been observed at the same depth where the strain is maximum. The thickness of the amorphous layer increases by further increasing the dose and reaches a value of about 0.18 [mu]m for [sigma] [equals] 5 x 10[sup 16] cm[sup [minus]2].

• OSTI ID: 5985159
• Journal Information: Journal of the Electrochemical Society; (United States), Vol. 140:7; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
CRYSTAL STRUCTURE
ION IMPLANTATION
CRYSTAL DEFECTS
EXPERIMENTAL DATA
HYDROGEN
SAMPLE PREPARATION
SEMICONDUCTOR DEVICES
STRAINS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
COHERENT SCATTERING
DATA
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
INDIUM COMPOUNDS
INFORMATION
MICROSCOPY
NONMETALS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SCATTERING
360605* - Materials- Radiation Effects
360602 - Other Materials- Structure &amp; Phase Studies