Electron beam enhanced surface modification for making highly resolved structures
This patent describes a method of forming submicron structures by electron beam enhanced surface modification of a substrate. The method consists of the following: (a) locating a substrate surface within an atmosphere of a partial pressure of a selected gas phase material that is capable of forming as dissociation products a reactant fragment and a stable leaving group when subjected to an electron beam; (b) writing a beam exposure pattern directly on the substrate surface by applying to the surface an electron beam of submicron width through the gas phase to cause dissociation of the gas phase and accumulation of the reactant fragment at the interface of the beam and the substrate surface; (c) continuing application of the electron beam to the pattern for a time sufficient and in dose sufficient to form a bound surface compound structure of the reactant fragment and substrate material locally coating the substrate surface in the beam exposure pattern; and (d) etching the substrate surface by a selective means for removing uncoated substrate material preferentially to the removal of the surface compound structure.
- Assignee:
- Dept. of Energy
- Patent Number(s):
- US 4566937
- OSTI ID:
- 5978827
- Resource Relation:
- Patent File Date: Filed date 10 Oct 1984
- Country of Publication:
- United States
- Language:
- English
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