Charge transfer and electric strength of thin silicon oxynitride films
The charge transfer mechanism in thin silicon oxynitride films of various oxygen and nitrogen content is investigated. The measurements are carried out in the temperature range 77-500/sup 0/K and frequency interval 20 Hz to 10 MHz for specimens 10 nm to 20 ..mu..m thick, prepared by activation decomposition of tetramethoxylene in nitrogen atmosphere under the action of 220-280 nm UV radiation of 5-25 klx intensity with a substrate temperature of 100-450/sup 0/C. It is shown that at low frequencies the conductivity has mainly a 2-center hopping while at higher frequencies it has a multicenter phonon-stimulated character with an activation energy of 0.32-0.56 eV and the predominance of a trapping level of an energy up to 2.2 eV.
- Research Organization:
- K.E. Tsiolkovskii Institute of Aviation Technology
- OSTI ID:
- 5977653
- Journal Information:
- Sov. Phys. J. (Engl. Transl.); (United States), Journal Name: Sov. Phys. J. (Engl. Transl.); (United States) Vol. 26:11; ISSN SOPJA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ACTIVATION ENERGY
CHALCOGENIDES
CHARGE TRANSPORT
DIELECTRIC PROPERTIES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ENERGY
FABRICATION
FILMS
FREQUENCY DEPENDENCE
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
QUANTITY RATIO
RADIATIONS
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
THIN FILMS
TRAPPING
ULTRAVIOLET RADIATION