Peculiarities of the photoconductivity of GaSe single crystals in the fundamental absorption edge region

Journal Article · Tue May 01 00:00:00 EDT 1984 · Sov. Phys. J. (Engl. Transl.); (United States)

OSTI ID:5977648

Katerinchuk, V N; Kovalyuk, Z D

The photocurrent spectra of layered GaSe single crystals are investigated at room temperature in the fundamental absorption edge region. Their peculiarities associated with the thickness of the specimens are examined for two configurations. In the first, light is incident in the direction of the crystallographic C axis on the surface containing the current contacts, while in the second, the light falls on the opposite surface, with no contacts on. Large photoconductivity anisotropy is only observed for photocarriers excited for h..nu.. < E /SUB g/ . It is explained by the formation of excitons in this section of the spectrum. The thickness dependence of photocurrent maximum is determined in the second configuration.

• Research Organization: Institute of Material Study Problems
• OSTI ID: 5977648
• Journal Information: Sov. Phys. J. (Engl. Transl.); (United States), Vol. 26:11; Other Information: Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 61-64, November, 1983
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM SELENIDES
PHOTOCONDUCTIVITY
TIN
ABSORPTION SPECTRA
BRIDGMAN METHOD
CRYSTAL STRUCTURE
DOPED MATERIALS
EXCITONS
MONOCRYSTALS
PHOTOCURRENTS
PHOTOSENSITIVITY
THICKNESS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
CRYSTALS
CURRENTS
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
GALLIUM COMPOUNDS
MATERIALS
METALS
PHYSICAL PROPERTIES
QUASI PARTICLES
SELENIDES
SELENIUM COMPOUNDS
SENSITIVITY
SPECTRA
360603* - Materials- Properties