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Title: A high-voltage modulator for high-power RF source research

Journal Article · · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/16.75211· OSTI ID:5976071
; ; ; ;  [1]
  1. Plasma Fusion Center, Massachusetts Inst. of Technology, Cambridge, MA (US)

This paper presents the design, construction, and operating results of a high-voltage modulator system capable of generating 700-kV, 2.5-{mu}s pulses at 5 pps into a load of 900 {Omega}. The modulator is used to energize a variety of high-power microwave devices requiring voltage stability and reproducibility. Voltage ripple is less than 0.2% during the 1.0-{mu}s flat top, with a shot-to-shot voltage variation of less than 0.1%. The primary circuit consists of two seven-stage tunable Rayleigh- type pulse-forming networks (PFN's) connected in parallel with a total impedance of 2.25 {Omega}, a total capacitance of 0.56 {mu}F, and a total inductance of 2.8 {mu}H. The PFN is charged by a highly stable 80-kV capacitor charging power supply (0.1% rms voltage ripple) at a rate of 10 kJ/s. The total energy stored (1.5 kJ) is released through an ITT F-187 thyratron into a 20:1 pulse transformer, which generates 700- kV, 2.5-1 {mu}s pulses. By changing the transformer, we have also obtained 250-kV, 1.7-kA pulses for driving low-impedance relativistic magnetron diodes. The flat-top voltage generated by the modulator is highly desirable for driving RF sources requiring high quality electron beams, such as free-electron lasers (FEL) and cyclotron auto-resonance masers (CARM). The modulator performance in our relativistic magnetron and CARM experiments is described.

OSTI ID:
5976071
Journal Information:
IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 38:4; ISSN 0018-9383
Country of Publication:
United States
Language:
English