Grain boundary phenomena in n-type CdTe films grown by hot wall vacuum evaporation
Films of n-type CdTe doped by coevaporation of indium have been deposited by hot wall vacuum evaporation on 7059 Corning glass and BaF/sub 2/ single crystal substrates. Layers deposited on glass show a dark resistivity of the order of 10/sup 5/ ..cap omega.. cm and a light resistivity of 500 ..cap omega.. cm under AM1.5; photoexcitation increases the electron density but does not affect the electron mobility. Layers deposited on BaF/sub 2/ show a dark resistivity of about 3 ..cap omega.. cm and a light resistivity of about 2 ..cap omega.. cm, corresponding to an electron density of 3.9 x 10/sup 16/ cm/sup -3/ and an electron mobility of 48 cm/sup 2//V s; illumination of these layers on BaF/sub 2/ increases the electron mobility but not the electron density. A quantitative model for grain boundary transport in polycrystalline materials is shown to give good agreement with the experimental data.
- Research Organization:
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
- OSTI ID:
- 5970053
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 54:7
- Country of Publication:
- United States
- Language:
- English
Similar Records
Preparation and properties of evaporated CdTe films compared with single-crystal CdTe. Progress report No. 5, November 1, 1981-January 31, 1982
Preparation and properties of evaporated CdTe films compared with single-crystal CdTe. Progress report No. 7, May 1-July 31, 1982
Related Subjects
CADMIUM TELLURIDES
GRAIN BOUNDARIES
BARIUM FLUORIDES
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRON DENSITY
ELECTRON MOBILITY
EVAPORATION
EXCITATION
EXPERIMENTAL DATA
FILMS
GLASS
INDIUM ADDITIONS
LAYERS
MATHEMATICAL MODELS
MONOCRYSTALS
N-TYPE CONDUCTORS
RADIATION EFFECTS
ALKALINE EARTH METAL COMPOUNDS
ALLOYS
BARIUM COMPOUNDS
CADMIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL STRUCTURE
CRYSTALS
DATA
ELECTRICAL PROPERTIES
ENERGY-LEVEL TRANSITIONS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
INDIUM ALLOYS
INFORMATION
MATERIALS
MICROSTRUCTURE
MOBILITY
NUMERICAL DATA
PARTICLE MOBILITY
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
TELLURIDES
TELLURIUM COMPOUNDS
360603* - Materials- Properties